Samsung Electronics announced the development of its 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology, as well as the completion of product evaluation for compatibility with AMD. The new DRAM leverages a new high-κ material that increases cell capacitance and proprietary design technology which improves critical circuit characteristics. It also features the industry’s highest die density, which enables a 20 percent gain in wafer productivity.
Samsung claims that its 12nm-class DRAM will help unlock speeds of up to 7.2 gigabits per second (Gbps), which translates into processing two 30 gigabyte (GB) UHD movies in just one second. The new DRAM will consume up to 23 percent less power compared to the previous DRAM, making it an ideal solution for global IT companies pursuing more environment-friendly operations. Innovation often requires close collaboration with industry partners to push the bounds of technology. They are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms.
